Hybrid Nonvolatile Memory Devices: One Transistor–One Resistor Devices for Polymer Non-Volatile Memory Applications (Adv. Mater. 24/2009)

Authors

  • Tae-Wook Kim,

    1. Heeger Center for Advanced Materials Department of Materials Science and Engineering Gwangju Institute of Science and Technology 1 Oryong-Dong, Buk-Gu Gwangju 500-712 (Korea)
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  • Hyejung Choi,

    1. Heeger Center for Advanced Materials Department of Materials Science and Engineering Gwangju Institute of Science and Technology 1 Oryong-Dong, Buk-Gu Gwangju 500-712 (Korea)
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  • Seung-Hwan Oh,

    1. Heeger Center for Advanced Materials Department of Materials Science and Engineering Gwangju Institute of Science and Technology 1 Oryong-Dong, Buk-Gu Gwangju 500-712 (Korea)
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  • Gunuk Wang,

    1. Heeger Center for Advanced Materials Department of Materials Science and Engineering Gwangju Institute of Science and Technology 1 Oryong-Dong, Buk-Gu Gwangju 500-712 (Korea)
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  • Dong-Yu Kim,

    1. Heeger Center for Advanced Materials Department of Materials Science and Engineering Gwangju Institute of Science and Technology 1 Oryong-Dong, Buk-Gu Gwangju 500-712 (Korea)
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  • Hyunsang Hwang,

    1. Heeger Center for Advanced Materials Department of Materials Science and Engineering Gwangju Institute of Science and Technology 1 Oryong-Dong, Buk-Gu Gwangju 500-712 (Korea)
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  • Takhee Lee

    Corresponding author
    1. Heeger Center for Advanced Materials Department of Materials Science and Engineering Gwangju Institute of Science and Technology 1 Oryong-Dong, Buk-Gu Gwangju 500-712 (Korea)
    • Heeger Center for Advanced Materials Department of Materials Science and Engineering Gwangju Institute of Science and Technology 1 Oryong-Dong, Buk-Gu Gwangju 500-712 (Korea).
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Abstract

original image

Takhee Lee and co-workers demonstrate on p. 2497 that 1T/1R hybrid devices consisting of a silicon transistor (p-MOSFET) and a resistive polymer memory as nonvolatile memory cell elements can be fabricated. The operation of the 1T/1R device can be controlled by the resistance states of the polymer memory device. Written or erased data in the 1T/1R devices can be maintained for more than 104 s.

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