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Organic Thin-Film Transistors: Controlling Nucleation and Crystallization in Solution-Processed Organic Semiconductors for Thin-Film Transistors (Adv. Mater. 35/2009)
Article first published online: 15 SEP 2009
DOI: 10.1002/adma.200990133
Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Lee, S. S., Kim, C. S., Gomez, E. D., Purushothaman, B., Toney, M. F., Wang, C., Hexemer, A., Anthony, John. E. and Loo, Y.-L. (2009), Organic Thin-Film Transistors: Controlling Nucleation and Crystallization in Solution-Processed Organic Semiconductors for Thin-Film Transistors (Adv. Mater. 35/2009). Adv. Mater., 21: n/a. doi: 10.1002/adma.200990133
Publication History
- Issue published online: 15 SEP 2009
- Article first published online: 15 SEP 2009
Funded by
- National Science Foundation MRSEC Program through the Princeton Center for Complex Materials. Grant Number: DMR-0819860
- Abstract
- Cited By
Keywords:
- Semiconductors;
- Transistors;
- Thin Films;
- Organic Electronics;
- Solution Processing

The grain size in solution-processed organic semiconductor thin films for TFTs can be tuned over a range of three orders of magnitude, report Yueh-Lin Loo and co-workers on p. 3605. The process involves the addition of fractional quantities of “impurities” that are capable of seeding the crystallization of the organic semiconductor, and the control thus exerted permitted studies that correlated increasing device mobility with increasing grain size.

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