Concept of a Molecular Charge Storage Dielectric Layer for Organic Thin-Film Memory Transistors

Authors

  • Martin Burkhardt,

    1. Organic Materials & Devices—Institute of Polymer Materials University Erlangen-Nürnberg Martensstraße 07, D-91058 Erlangen (Germany)
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  • Abdesselam Jedaa,

    1. Organic Materials & Devices—Institute of Polymer Materials University Erlangen-Nürnberg Martensstraße 07, D-91058 Erlangen (Germany)
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  • Michael Novak,

    1. Organic Materials & Devices—Institute of Polymer Materials University Erlangen-Nürnberg Martensstraße 07, D-91058 Erlangen (Germany)
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  • Alexander Ebel,

    1. Institute for Organic Chemistry II University Erlangen-Nürnberg Henkestraße 42, D-91054 Erlangen (Germany)
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  • Kislon Voïtchovsky,

    1. Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge, MA 02139 (USA)
    2. Ecole Polytechnique Fédérale de Lausanne CH-1015 Lausanne (Switzerland)
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  • Francesco Stellacci,

    1. Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge, MA 02139 (USA)
    2. Ecole Polytechnique Fédérale de Lausanne CH-1015 Lausanne (Switzerland)
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  • Andreas Hirsch,

  • Marcus Halik

    Corresponding author
    1. Organic Materials & Devices—Institute of Polymer Materials University Erlangen-Nürnberg Martensstraße 07, D-91058 Erlangen (Germany)
    2. Institute for Organic Chemistry II University Erlangen-Nürnberg Henkestraße 42, D-91054 Erlangen (Germany)
    • Organic Materials & Devices—Institute of Polymer Materials University Erlangen-Nürnberg Martensstraße 07, D-91058 Erlangen (Germany).
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Abstract

original image

A mixed self-assembled monolayer containing aliphatic and electron-accepting (C60) components is employed as an ultrathin molecular gate dielectric to facilitate reversible, nonvolatile electronic memory functionality in organic transistors at low supply voltages. By adjusting the stoichiometry of the monolayer components, the transistor and memory characteristics can be tuned.

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