Direct Identification of the Conducting Channels in a Functioning Memristive Device



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Titanium dioxide memristive devices have been non-destructively characterized using x-ray absorption spectromicroscopy and TEM. These techniques allow direct identification of the chemistry and structure of the conducting channel responsible for the bipolar resistance switching seen in these devices. Within the TiO2 matrix, we observe the formation of a Ti4O7 Magnéli phase possessing metallic properties and ordered planes of oxygen vacancies.