Advanced Materials

Fiber Field-Effect Device Via In Situ Channel Crystallization

Authors

  • Sylvain Danto,

    1. Department of Materials Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, MA 02139 (USA)
    2. Research Laboratory of Electronics, MIT, Cambridge, MA 02139 (USA)
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  • Fabien Sorin,

    1. Department of Materials Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, MA 02139 (USA)
    2. Research Laboratory of Electronics, MIT, Cambridge, MA 02139 (USA)
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  • Nicholas D. Orf,

    1. Department of Materials Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, MA 02139 (USA)
    2. Research Laboratory of Electronics, MIT, Cambridge, MA 02139 (USA)
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  • Zheng Wang,

    1. Department of Materials Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, MA 02139 (USA)
    2. Research Laboratory of Electronics, MIT, Cambridge, MA 02139 (USA)
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  • Scott A. Speakman,

    1. Center for Materials Science and Engineering, MIT, Cambridge, MA 02139 (USA)
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  • John D. Joannopoulos,

    1. Research Laboratory of Electronics, MIT, Cambridge, MA 02139 (USA)
    2. Institute for Soldier Nanotechnologies, MIT, Cambridge, MA 02139 (USA)
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  • Yoel Fink

    Corresponding author
    1. Department of Materials Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, MA 02139 (USA)
    2. Research Laboratory of Electronics, MIT, Cambridge, MA 02139 (USA)
    3. Institute for Soldier Nanotechnologies, MIT, Cambridge, MA 02139 (USA)
    • Department of Materials Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, MA 02139 (USA).
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Abstract

The in situ crystallization of the incorporated amorphous semiconductor within the multimaterial fiber device yields a large decrease in defect density and a concomitant five-order-of-magnitude decrease in resistivity of the novel metal-insulator-crystalline semiconductor structure. Using a post-drawing crystallization process, the first tens-of-meters-long single-fiber field-effect device is demonstrated. This work opens significant opportunities for incorporating higher functionality in functional fibers and fabrics.

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