Ionic/Electronic Hybrid Materials Integrated in a Synaptic Transistor with Signal Processing and Learning Functions

Authors

  • Qianxi Lai,

    1. Department of Mechanical and Aerospace Engineering, California NanoSystems Institute University of California Los Angeles, CA 90095 (USA)
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  • Lei Zhang,

    1. Department of Mechanical and Aerospace Engineering, California NanoSystems Institute University of California Los Angeles, CA 90095 (USA)
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  • Zhiyong Li,

    1. Information and Quantum Systems Research Lab, Hewlett-Packard Laboratories 1501 Page Mill Road, Palo Alto, CA 94304 (USA)
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  • William F. Stickle,

    1. Advanced Materials Process Lab and Advanced Diagnostic Lab Hewlett-Packard Company Corvallis, OR 97330 (USA)
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  • R. Stanley Williams,

    1. Information and Quantum Systems Research Lab, Hewlett-Packard Laboratories 1501 Page Mill Road, Palo Alto, CA 94304 (USA)
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  • Yong Chen

    Corresponding author
    1. Department of Mechanical and Aerospace Engineering, California NanoSystems Institute University of California Los Angeles, CA 90095 (USA)
    • Department of Mechanical and Aerospace Engineering, California NanoSystems Institute University of California Los Angeles, CA 90095 (USA).
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Abstract

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A synaptic transistor is fabricated by integrating ionic/electronic hybrid materials to emulate biological synapses with spike signal processing, learning, and memory functions. A potential spike generates transient ionic fluxes in a polymer layer in the transistor gate, triggering an excitatory postsynaptic current in the transistor drain. Temporally correlated pre- and post-synaptic spikes modify ions stored in the polymer, resulting in the nonvolatile modification of the transistor with spike-timing-dependent plasticity.

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