Communication

Local-Illuminated Ultrathin Silicon Nanomembranes with Photovoltaic Effect and Negative Transconductance

  1. Ping Feng1,
  2. Ingolf Mönch1,
  3. Gaoshan Huang1,
  4. Stefan Harazim1,
  5. Elliot J. Smith1,
  6. Yongfeng Mei1,2,*,
  7. Oliver G. Schmidt1

Article first published online: 20 AUG 2010

DOI: 10.1002/adma.201000583

Issue

Advanced Materials

Advanced Materials

Volume 22, Issue 33, pages 3667–3671, September 1, 2010

Additional Information

How to Cite

Feng, P., Mönch, I., Huang, G., Harazim, S., Smith, E. J., Mei, Y. and Schmidt, O. G. (2010), Local-Illuminated Ultrathin Silicon Nanomembranes with Photovoltaic Effect and Negative Transconductance. Adv. Mater., 22: 3667–3671. doi: 10.1002/adma.201000583

Author Information

  1. 1

    Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany)

  2. 2

    Department of Materials Science, Fudan University, Handan Road 220, 200433 Shanghai (China)

*Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany).

Publication History

  1. Issue published online: 20 AUG 2010
  2. Article first published online: 20 AUG 2010
  3. Manuscript Revised: 6 APR 2010
  4. Manuscript Received: 15 FEB 2010

Funded by

  • Multidisciplinary University Research Initiative (MURI)
  • U. S. Air Force Office of Scientific Research (AFOSR). Grant Number: FA9550-09-1-0550

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Keywords:

  • Solar cells;
  • Transistors;
  • Nanodevices;
  • Photovoltaic Devices;
  • Nanomembranes
Thumbnail image of graphical abstract

Ultrathin silicon nanomembranes (SiNMs) on insulators under local illumination reveal a gate-controlled photovoltaic effect and negative transconductance in Schottky transistors applying both homo- and heterocontacts. Tiny variations of Schottky barriers between source and drain contacts are responsible for the photovoltaic effect in ultrathin SiNMs and can be enhanced by gate voltage and/or contact design.

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