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Low-Voltage UV-Electroluminescence from ZnO-Nanowire Array/p-GaN Light-Emitting Diodes

Authors

  • Oleg Lupan,

    Corresponding author
    1. Laboratoire d’Electrochimie, Chimie des Interfaces et Modélisation pour l’Energie, LECIME, UMR7575 CNRS, Chimie ParisTech, 11 rue, P. et M. Curie, 75231 Paris cedex 05 (France)
    Current affiliation:
    1. On leave from: Department of Microelectronics and Semiconductor Devices, Technical University of Moldova, 168 Stefan cel Mare Blvd., Chisinau, MD-2004, (Republic of Moldova).
    • Laboratoire d’Electrochimie, Chimie des Interfaces et Modélisation pour l’Energie, LECIME, UMR7575 CNRS, Chimie ParisTech, 11 rue, P. et M. Curie, 75231 Paris cedex 05 (France).
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  • Thierry Pauporté,

    Corresponding author
    1. Laboratoire d’Electrochimie, Chimie des Interfaces et Modélisation pour l’Energie, LECIME, UMR7575 CNRS, Chimie ParisTech, 11 rue, P. et M. Curie, 75231 Paris cedex 05 (France)
    • Laboratoire d’Electrochimie, Chimie des Interfaces et Modélisation pour l’Energie, LECIME, UMR7575 CNRS, Chimie ParisTech, 11 rue, P. et M. Curie, 75231 Paris cedex 05 (France).
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  • Bruno Viana

    1. Laboratoire de Chimie de la Matière Condensée de Paris, LCMCP, UMR7574 CNRS, Chimie, ParisTech, 11 rue, P. et M. Curie, 75231 Paris cedex 05 (France)
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Abstract

original image

UV LEDs: The fabrication of an ITO/ZnO-nanowires/p-GaN/In-Ga LED structure is reported with an active emitting layer made of high-quality epitaxial ZnO grown electrochemically from a solution at low temperature (85 °C). A narrow ultra-violet electroluminescence centered at 397 nm is obtained at room temperature starting at an applied forward bias of 4.4 V (see figure). The emission is of high brightness and stable at low applied voltages beyond 6 V.

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