Interfacial Trap Density-of-States in Pentacene- and ZnO-Based Thin-Film Transistors Measured via Novel Photo-excited Charge-Collection Spectroscopy



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Direct quantitative mapping of the density-of-states, named the photo-excited charge-collection technique, for the interface traps at the n-ZnO and/or p-pentacene thin-film transistor channel is implemented by using monochromatic photons which are carried by optical fibers and are probed onto thin-film transistors.