Interfacial Trap Density-of-States in Pentacene- and ZnO-Based Thin-Film Transistors Measured via Novel Photo-excited Charge-Collection Spectroscopy
Article first published online: 1 JUN 2010
Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 22, Issue 30, pages 3260–3265, August 10, 2010
How to Cite
Lee, K., Oh, M. S., Mun, S.-j., Lee, K. H., Ha, T. W., Kim, J. H., Park, S.-H. K., Hwang, C.-S., Lee, B. H., Sung, M. M. and Im, S. (2010), Interfacial Trap Density-of-States in Pentacene- and ZnO-Based Thin-Film Transistors Measured via Novel Photo-excited Charge-Collection Spectroscopy. Adv. Mater., 22: 3260–3265. doi: 10.1002/adma.201000722
- Issue published online: 3 AUG 2010
- Article first published online: 1 JUN 2010
- Manuscript Received: 27 FEB 2010
- NRF. Grant Number: 2009-8-0403
- MKE. Grant Number: 2008-8-0613
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