Communication

Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE)

  1. Jeongho Park*,
  2. William C. Mitchel,
  3. Lawrence Grazulis,
  4. Howard E. Smith,
  5. Kurt G. Eyink,
  6. John J. Boeckl,
  7. David H. Tomich,
  8. Shanee D. Pacley,
  9. John. E. Hoelscher

Article first published online: 20 AUG 2010

DOI: 10.1002/adma.201000756

Issue

Advanced Materials

Advanced Materials

Volume 22, Issue 37, pages 4140–4145, October 1, 2010

Additional Information

How to Cite

Park, J., Mitchel, W. C., Grazulis, L., Smith, H. E., Eyink, K. G., Boeckl, J. J., Tomich, D. H., Pacley, S. D. and Hoelscher, John. E. (2010), Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE). Adv. Mater., 22: 4140–4145. doi: 10.1002/adma.201000756

Author Information

  1. Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/RXPS, Wright – Patterson Air Force Base, Ohio, 45433 (USA)

*Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/RXPS, Wright – Patterson Air Force Base, Ohio, 45433 (USA).

Publication History

  1. Issue published online: 20 SEP 2010
  2. Article first published online: 20 AUG 2010
  3. Manuscript Received: 1 MAR 2010

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Keywords:

  • epitaxial graphene;
  • carbon molecular beam epitaxy(CMBE);
  • fullence(C60);
  • graphite filament;
  • silicon carbide
Thumbnail image of graphical abstract

A novel growth method (carbon molecular beam epitaxy (CMBE)) has been developed to produce high-quality and large-area epitaxial graphene. This method demonstrates significantly improved controllability of the graphene growth. CMBE with C60 produces AB stacked graphene, while growth with the graphite filament results in non-Bernal stacked graphene layers with a Dirac-like electronic structure, which is similar to graphene grown by thermal decomposition on SiC (000-1).

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