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Keywords:

  • epitaxial graphene;
  • carbon molecular beam epitaxy(CMBE);
  • fullence(C60);
  • graphite filament;
  • silicon carbide
Thumbnail image of graphical abstract

A novel growth method (carbon molecular beam epitaxy (CMBE)) has been developed to produce high-quality and large-area epitaxial graphene. This method demonstrates significantly improved controllability of the graphene growth. CMBE with C60 produces AB stacked graphene, while growth with the graphite filament results in non-Bernal stacked graphene layers with a Dirac-like electronic structure, which is similar to graphene grown by thermal decomposition on SiC (000-1).