Induced Crystallization of Rubrene in Thin-Film Transistors

Authors

  • Zhefeng Li,

    1. Department of Chemistry, The Chinese University of Hong Kong Shatin, New Territories, Hong Kong (China)
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  • Jun Du,

    1. Department of Electronic Engineering, The Chinese University of Hong Kong Shatin, New Territories, Hong Kong (China)
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  • Qin Tang,

    1. Department of Chemistry, The Chinese University of Hong Kong Shatin, New Territories, Hong Kong (China)
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  • Feng Wang,

    1. Department of Chemistry, The Chinese University of Hong Kong Shatin, New Territories, Hong Kong (China)
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  • Jian-Bin Xu,

    1. Department of Electronic Engineering, The Chinese University of Hong Kong Shatin, New Territories, Hong Kong (China)
    2. Materials Science and Technology Research Center, The Chinese University of Hong Kong Shatin, New Territories, Hong Kong (China)
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  • Jimmy C. Yu,

    1. Department of Chemistry, The Chinese University of Hong Kong Shatin, New Territories, Hong Kong (China)
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  • Qian Miao

    Corresponding author
    1. Department of Chemistry, The Chinese University of Hong Kong Shatin, New Territories, Hong Kong (China)
    2. Materials Science and Technology Research Center, The Chinese University of Hong Kong Shatin, New Territories, Hong Kong (China)
    • Department of Chemistry, The Chinese University of Hong Kong Shatin, New Territories, Hong Kong (China).
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Abstract

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The poor crystallinity of rubrene in thin films is an obstacle limiting its practical applications in organic electronics. Here we report a strategy of using 6,13-pentacenequinone (PQ), an easily crystallized insulating molecule, as the template layer to induce the crystallization of rubrene in vacuum-deposited thin film transistors. This strategy relies on the bilayer steps of octadecylphosphonic acid, which play a unique role in modulating the morphology of PQ.

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