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Advanced Materials

The Materials Challenge in Diffraction-Unlimited Direct-Laser-Writing Optical Lithography

Authors

  • Joachim Fischer,

    Corresponding author
    1. Institut für Angewandte Physik and DFG-Center for Functional, Nanostructures (CFN), Karlsruhe Institute of Technology (KIT), Wolfgang-Gaede-Straße 1, D-76131 Karlsruhe (Germany)
    • Institut für Angewandte Physik and DFG-Center for Functional, Nanostructures (CFN), Karlsruhe Institute of Technology (KIT), Wolfgang-Gaede-Straße 1, D-76131 Karlsruhe (Germany).
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  • Georg von Freymann,

    1. Institut für Angewandte Physik and DFG-Center for Functional, Nanostructures (CFN), Karlsruhe Institute of Technology (KIT), Wolfgang-Gaede-Straße 1, D-76131 Karlsruhe (Germany)
    2. Institut für Nanotechnologie, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen (Germany)
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  • Martin Wegener

    1. Institut für Angewandte Physik and DFG-Center for Functional, Nanostructures (CFN), Karlsruhe Institute of Technology (KIT), Wolfgang-Gaede-Straße 1, D-76131 Karlsruhe (Germany)
    2. Institut für Nanotechnologie, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen (Germany)
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Abstract

Using a novel photoresist (composed of pentaerythritol triacrylate and isopropyl thioxanthone) that favors stimulated emission depletion by a π-π* transition and using a two-color two-photon excitation scheme, 65-nm wide lines are achieved. This value is limited by parasitic two-photon absorption of the continuous-wave depletion beam. It is estimated that, without this process, line widths of 30 nm are in reach.

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