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Keywords:

  • ZnO nanowires;
  • Heterojunction;
  • Photovoltaic effect;
  • Power;
  • UV LEDs
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We fabricate heterojunctions consisting of a single n-type ZnO nanowire and a p-type GaN film. The photovoltaic effect of heterojunctions exhibits open-circuit voltages ranging from 2 to 2.7 V, and a maximum output power reaching 80 nW. Light-emitting diodes with UV electroluminescence based on the heterojunctions are demonstrated.