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Three-Dimensional Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy

Authors

  • Xin Ou,

    Corresponding author
    1. Max Planck Institute of Microstructure Physics, Weinberg 2, Halle D-06120 (Germany)
    2. Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden–Rossendorf e.V., P.O. Box 510119, 01314 Dresden (Germany)
    3. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 20050 (P.R. China)
    • Max Planck Institute of Microstructure Physics, Weinberg 2, Halle D-06120 (Germany).
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  • Pratyush Das Kanungo,

    Corresponding author
    1. Max Planck Institute of Microstructure Physics, Weinberg 2, Halle D-06120 (Germany)
    • Max Planck Institute of Microstructure Physics, Weinberg 2, Halle D-06120 (Germany).
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  • Reinhard Kögler,

    1. Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden–Rossendorf e.V., P.O. Box 510119, 01314 Dresden (Germany)
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  • Peter Werner,

    1. Max Planck Institute of Microstructure Physics, Weinberg 2, Halle D-06120 (Germany)
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  • Ulrich Gösele,

    1. Max Planck Institute of Microstructure Physics, Weinberg 2, Halle D-06120 (Germany)
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  • Wolfgang Skorupa,

    1. Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden–Rossendorf e.V., P.O. Box 510119, 01314 Dresden (Germany)
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  • Xi Wang

    1. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 20050 (P.R. China)
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Abstract

original image

Three-dimensional profiling of nanowires is carried out by repeatedly scanning the same nanowire with controlled force of the probing tip. This method abrades material from the measured cross section during each scan, allowing three-dimensional profiling. The typical shape of an individual Si nanowire, measured by SEM, and the respective resistivity images of several cross sections obtained by scanning spreading resistance microscopy are shown.

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