Designed Organophosphonate Self-Assembled Monolayers Enhance Device Performance of Pentacene-Based Organic Thin-Film Transistors

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Abstract

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Excellent device characteristics are measured for a pentacene-based thin film transistor where the SiO2 gate dielectric is terminated with a self-assembled monolayer of 9,10-dinaphthylanthracene-2-phosphonate in which calculated molecular spacings are about 0.7 nm. This creates channels that are on the order of the “thickness” of an aromatic π system, which could allow for intercalation of pentacene units, favoring a π-stacking motif for this first pentacene layer.

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