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Device Configurations for Ambipolar Transport in Flexible, Pentacene Transistors

Authors

  • Sangameshwar Rao Saudari,

    1. Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, (USA)
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  • Yu Jen Lin,

    1. Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, (USA)
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  • Yuming Lai,

    1. Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA 19104, (USA)
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  • Cherie R. Kagan

    Corresponding author
    1. Department of Electrical and Systems Engineering, Department of Materials Science and Engineering, Department of Chemistry, University of Pennsylvania, Philadelphia, PA 19104, (USA)
    • Department of Electrical and Systems Engineering, Department of Materials Science and Engineering, Department of Chemistry, University of Pennsylvania, Philadelphia, PA 19104, (USA).
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Abstract

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Ambipolar pentacene transistors in bottom contact-bottom gate geometry are fabricated on flexible substrates using parylene as a dielectric and self-assembled monolayer treatment of the source-drain electrodes to improve charge injection. Hole and electron mobilities of 0.07-0.1 cm2 V−1 s−1 and 0.01-0.04 cm2 V−1 s−1 are achieved. CMOS like inverters are built and gains of up to 110 are reported.

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