Low-Temperature Processable Organic-Inorganic Hybrid Gate Dielectrics for Solution-Based Organic Field-Effect Transistors

Authors

  • Takashi Nagase,

    1. Department of Physics and Electronics, Osaka Prefecture University, 1–1 Gakuen-cho, Naka-ku, Sakai 599–8531 (Japan)
    2. The Research Institute for Molecular Electronic Devices, Osaka Prefecture University, 1–1 Gakuen-cho, Naka-ku, Sakai 599–8531 (Japan)
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  • Takashi Hamada,

    1. Department of Physics and Electronics, Osaka Prefecture University, 1–1 Gakuen-cho, Naka-ku, Sakai 599–8531 (Japan)
    Current affiliation:
    1. Present address: Institute of Industrial Science, the University of Tokyo, 4–6-1 Komaba, Meguro-ku, Tokyo 153–8505 (Japan)
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  • Kenji Tomatsu,

    1. Department of Physics and Electronics, Osaka Prefecture University, 1–1 Gakuen-cho, Naka-ku, Sakai 599–8531 (Japan)
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  • Saori Yamazaki,

    1. Department of Physics and Electronics, Osaka Prefecture University, 1–1 Gakuen-cho, Naka-ku, Sakai 599–8531 (Japan)
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  • Takashi Kobayashi,

    1. Department of Physics and Electronics, Osaka Prefecture University, 1–1 Gakuen-cho, Naka-ku, Sakai 599–8531 (Japan)
    2. The Research Institute for Molecular Electronic Devices, Osaka Prefecture University, 1–1 Gakuen-cho, Naka-ku, Sakai 599–8531 (Japan)
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  • Shuichi Murakami,

    1. Technology Research Institute of Osaka Prefecture, 2–7-1 Ayumino, Izumi, Osaka 594–1157 (Japan)
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  • Kimihiro Matsukawa,

    1. Osaka Municipal Technical Research Institute, 1–6-50 Morinomiya, Joto-ku, Osaka 536–8533 (Japan)
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  • Hiroyoshi Naito

    Corresponding author
    1. Department of Physics and Electronics, Osaka Prefecture University, 1–1 Gakuen-cho, Naka-ku, Sakai 599–8531 (Japan)
    2. The Research Institute for Molecular Electronic Devices, Osaka Prefecture University, 1–1 Gakuen-cho, Naka-ku, Sakai 599–8531 (Japan)
    • Department of Physics and Electronics, Osaka Prefecture University, 1–1 Gakuen-cho, Naka-ku, Sakai 599–8531 (Japan).
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Abstract

original image

Organic-inorganic hybrid poly(methyl silsesquioxane) with a low curing temperature of 150 °C synthesized by a sol-gel method is employed as a gate dielectric for solution-based organic field-effect transistors. The device exhibits mobility enhancement, compared with those with SiO2 dielectrics, and hysteresis-free, high stable operation, which is attributed to extremely low concentration of silanol groups of the poly(methyl silsesquioxane) dielectric.

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