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Advanced Materials

Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices

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Abstract

Conductive atomic force microscopy combined with a delamination technique is used to remove the top electrode of Fe-doped SrTiO3 metal–insulator–metal structures and gain insight into the active switching interface. Both a filamentary and an area-dependent switching process with opposite switching polarities are found in the same sample.

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