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Near-Infrared Inorganic/Organic Optical Upconverter with an External Power Efficiency of >100%

Authors

  • Jun Chen,

    1. Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo, N2L 3G1 (Canada)
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  • Dayan Ban,

    Corresponding author
    1. Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo, N2L 3G1 (Canada)
    • Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo, N2L 3G1 (Canada).
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  • Michael G. Helander,

    1. Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, M5S 3E4 (Canada)
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  • Zheng-Hong Lu,

    1. Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, M5S 3E4 (Canada)
    2. Department of Physics, Yunnan University, 2 Cuihu Beilu, Yunnan, Kunming 650091 (P. R. China)
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  • Philip Poole

    1. Institute for Microstructural Sciences, National Research Council, 1200 Montreal Road, Ottawa, K1A 0R6 (Canada)
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Abstract

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A near-infrared (1.5 μm) to visible light (green) electro-optical upconverter with amplified power gain has been designed and demonstrated. The device was fabricated by direct tandem integration of an organic light emitting diode with an inorganic InGaAs/InP heterojunction phototransistor. An overall external upconversion power efficiency of 155% was measured at room temperature, demonstrating the utility of hybrid organic/inorganic semiconductor systems.

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