Towards Gigahertz Operation: Ultrafast Low Turn-on Organic Diodes and Rectifiers Based on C60 and Tungsten Oxide

Authors

  • Dongmo Im,

    1. Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 305 – 701, Republic of Korea
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  • Hanul Moon,

    1. Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 305 – 701, Republic of Korea
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  • Minchul Shin,

    1. Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 305 – 701, Republic of Korea
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  • Joungho Kim,

    1. Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 305 – 701, Republic of Korea
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  • Seunghyup Yoo

    Corresponding author
    1. Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 305 – 701, Republic of Korea
    • Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 305 – 701, Republic of Korea.
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Abstract

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Ultrafast organic diodes with low turn-on voltage based on a junction between C60 and WO3 are proposed. The high electron mobility of C60 layers and the optimal work function of hexamethyldisilazane (HMDS)-treated WO3 layers together provide ideal diode characteristics including high rectification ratio and low turn-on voltage. Ultrahigh frequency (UHF) compatible rectifiers with a low voltage drop are demonstrated with the C60/WO3 diodes.

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