Advanced Materials

Emergent Properties Resulting from Type-II Band Alignment in Semiconductor Nanoheterostructures

Authors

  • Shun S. Lo,

    1. Department of Chemistry, Institute for Optical Science, and Center for Quantum Information and Quantum Contro, l80 St. George Street, University of Toronto, Ontario M5S 3H6, Canada
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  • Tihana Mirkovic,

    1. Department of Chemistry, Institute for Optical Science, and Center for Quantum Information and Quantum Contro, l80 St. George Street, University of Toronto, Ontario M5S 3H6, Canada
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  • Chi-Hung Chuang,

    1. Department of Chemistry, Case Western Reserve University, 10900 Euclid Avenue, Millis G14, Cleveland, OH 44106-7078
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  • Clemens Burda,

    Corresponding author
    1. Department of Chemistry, Case Western Reserve University, 10900 Euclid Avenue, Millis G14, Cleveland, OH 44106-7078
    • Department of Chemistry, Case Western Reserve University, 10900 Euclid Avenue, Millis G14, Cleveland, OH 44106-7078.
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  • Gregory D. Scholes

    Corresponding author
    1. Department of Chemistry, Institute for Optical Science, and Center for Quantum Information and Quantum Contro, l80 St. George Street, University of Toronto, Ontario M5S 3H6, Canada
    • Department of Chemistry, Institute for Optical Science, and Center for Quantum Information and Quantum Contro, l80 St. George Street, University of Toronto, Ontario M5S 3H6, Canada
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Abstract

The development of elegant synthetic methodologies for the preparation of monocomponent nanocrystalline particles has opened many possibilities for the preparation of heterostructured semiconductor nanostructures. Each of the integrated nanodomains is characterized by its individual physical properties, surface chemistry, and morphology, yet, these multicomponent hybrid particles present ideal systems for the investigation of the synergetic properties that arise from the material combination in a non-additive fashion. Of particular interest are type-II heterostructures, where the relative band alignment of their constituent semiconductor materials promotes a spatial separation of the electron and hole following photoexcitation, a highly desirable property for photovoltaic applications. This article highlights recent progress in both synthetic strategies, which allow for material and architectural modulation of novel nanoheterostructures, as well as the experimental work that provides insight into the photophysical properties of type-II heterostructures. The effects of external factors, such as electric fields, temperature, and solvent are explored in conjunction with exciton and multiexciton dynamics and charge transfer processes typical for type-II semiconductor heterostructures.

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