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Electric-Field-Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories

Authors

  • Laurent Cario,

    1. Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, BP 32229, 44322 Nantes Cedex 3 (France)
    Current affiliation:
    1. These authors contributed equally to this work
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  • Cristian Vaju,

    1. Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, BP 32229, 44322 Nantes Cedex 3 (France)
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  • Benoit Corraze,

    1. Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, BP 32229, 44322 Nantes Cedex 3 (France)
    Current affiliation:
    1. These authors contributed equally to this work
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  • Vincent Guiot,

    1. Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, BP 32229, 44322 Nantes Cedex 3 (France)
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  • Etienne Janod

    Corresponding author
    1. Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, BP 32229, 44322 Nantes Cedex 3 (France)
    • Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, BP 32229, 44322 Nantes Cedex 3 (France).
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Abstract

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Flash memories (USB portable drives) are close to their miniaturization limits. The ultimate evolution of such devices is believed to exploit different concepts such as electronic phase transitions. Here we show that an electric field can trigger fast resistive switching in the fragile Mott insulators AM4X8 (A= Ga, Ge ; M = V, Nb, Ta; X = S, Se). This new type of resistive switching could lead to a new class of resistive random access memory (RRAM) with fast writing/erasing times (down to 50 ns) and resistance ratios ΔR/R of the order of 25% at room temperature.

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