Communication
Three-Dimensional Integration of Organic Resistive Memory Devices
Article first published online: 13 SEP 2010
DOI: 10.1002/adma.201002575
Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Song, S., Cho, B., Kim, T.-W., Ji, Y., Jo, M., Wang, G., Choe, M., Kahng, Y. H., Hwang, H. and Lee, T. (2010), Three-Dimensional Integration of Organic Resistive Memory Devices. Adv. Mater., 22: 5048–5052. doi: 10.1002/adma.201002575
Publication History
- Issue published online: 26 NOV 2010
- Article first published online: 13 SEP 2010
- Manuscript Revised: 8 AUG 2010
- Manuscript Received: 18 JUL 2010
Keywords:
- Organic electronics;
- Organic memory;
- 3-dimensional stacking;
- Non-volatile memory

Organic memory: Our three-dimensionally (3D) stacked 8 × 8 cross-bar array organic resistive memory devices showed non-volatile memory switching behavior, in which individual memory cells in the different layers can be independently controlled and monitored. The 3D stackable organic memory devices will enable achieving highly integrable organic memory devices and other organic-based electronics with much increased cell density.

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