Advanced Materials

Three-Dimensional Integration of Organic Resistive Memory Devices

Authors

  • Sunghoon Song,

    1. Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500–712 (Korea)
    Search for more papers by this author
  • Byungjin Cho,

    1. Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500–712 (Korea)
    Search for more papers by this author
  • Tae-Wook Kim,

    1. Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500–712 (Korea)
    Current affiliation:
    1. Present Address: Department of Materials Science and Engineering, University of Washington, Seattle, Washington, 98195 (USA)
    Search for more papers by this author
  • Yongsung Ji,

    1. Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500–712 (Korea)
    Search for more papers by this author
  • Minseok Jo,

    1. Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500–712 (Korea)
    Search for more papers by this author
  • Gunuk Wang,

    1. Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500–712 (Korea)
    Search for more papers by this author
  • Minhyeok Choe,

    1. Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500–712 (Korea)
    Search for more papers by this author
  • Yung Ho Kahng,

    1. Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500–712 (Korea)
    Search for more papers by this author
  • Hyunsang Hwang,

    1. Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500–712 (Korea)
    2. Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju, 500–712 (Korea)
    Search for more papers by this author
  • Takhee Lee

    Corresponding author
    1. Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500–712 (Korea)
    2. Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju, 500–712 (Korea)
    • Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500–712 (Korea).
    Search for more papers by this author

Abstract

Organic memory: Our three-dimensionally (3D) stacked 8 × 8 cross-bar array organic resistive memory devices showed non-volatile memory switching behavior, in which individual memory cells in the different layers can be independently controlled and monitored. The 3D stackable organic memory devices will enable achieving highly integrable organic memory devices and other organic-based electronics with much increased cell density.

original image

Ancillary