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Interfacial Recombination for Fast Operation of a Planar Organic/QD Infrared Photodetector

Authors

  • Timothy P. Osedach,

    1. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139 (USA)
    2. School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138 (USA)
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  • Ni Zhao,

    1. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139 (USA)
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  • Scott M. Geyer,

    1. Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA 02139 (USA)
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  • Liang-Yi Chang,

    1. Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA 02139 (USA)
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  • Darcy D. Wanger,

    1. Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA 02139 (USA)
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  • Alexi C. Arango,

    1. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139 (USA)
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  • Moungi C. Bawendi,

    1. Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA 02139 (USA)
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  • Vladimir Bulović

    Corresponding author
    1. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139 (USA)
    2. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139 (USA)
    • Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139 (USA).
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Abstract

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A planar infrared photodetector consisting of discrete films of PbS quantum dots (QDs) and the fullerene derivative, PCBM, is reported. A fast recombination process at the PbS QD/PCBM interface enables an improvement in the response speed of greater than two orders-of-magnitude over devices consisting only of the QD film. The physical processes governing device operation and performance are explored.

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