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Advancing MIM Electronics: Amorphous Metal Electrodes

Authors

  • E. William Cowell III,

    1. School of Electrical Engineering and Computer Science, Oregon State University, 1148 Kelley Engineering Center, Corvallis, OR 97331–5501, USA
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  • Nasir Alimardani,

    1. School of Electrical Engineering and Computer Science, Oregon State University, 1148 Kelley Engineering Center, Corvallis, OR 97331–5501, USA
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  • Christopher C. Knutson,

    1. Department of Chemistry, Oregon State University, 153 Gilbert Hall, Corvallis, OR 97331–4003, USA
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  • John F. Conley Jr.,

    1. School of Electrical Engineering and Computer Science, Oregon State University, 1148 Kelley Engineering Center, Corvallis, OR 97331–5501, USA
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  • Douglas A. Keszler,

    1. Department of Chemistry, Oregon State University, 153 Gilbert Hall, Corvallis, OR 97331–4003, USA
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  • Brady J. Gibbons,

    1. School of Mechanical, Industrial, and Manufacturing Engineering, Oregon State University, 204 Rogers Hall, Corvallis, OR 97331–6001, USA
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  • John F. Wager

    Corresponding author
    1. School of Electrical Engineering and Computer Science, Oregon State University, 1148 Kelley Engineering Center, Corvallis, OR 97331–5501, USA
    • School of Electrical Engineering and Computer Science, Oregon State University, 1148 Kelley Engineering Center, Corvallis, OR 97331–5501, USA.
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Abstract

Amorphous metal thin films with atomically smooth surfaces are employed as contact layers for the realization of metal-insulator-metal (MIM) devices operating on the basis of controlled quantum mechanical tunneling through an ultrathin dielectric.

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