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Advanced Materials

Solution-Processable Organic Single Crystals with Bandlike Transport in Field-Effect Transistors

Authors

  • Chuan Liu,

    1. International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki, Tsukuba, Ibaraki 305–0044, Japan
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  • Takeo Minari,

    1. International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki, Tsukuba, Ibaraki 305–0044, Japan
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  • Xubing Lu,

    1. International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki, Tsukuba, Ibaraki 305–0044, Japan
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  • Akichika Kumatani,

    1. International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki, Tsukuba, Ibaraki 305–0044, Japan
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  • Kazuo Takimiya,

    1. Department of Applied Chemistry, Graduate School of Engineering, Institute for Advanced Materials Research, Hiroshima University, Higashi-Hiroshima, Japan
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  • Kazuhito Tsukagoshi

    Corresponding author
    1. International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki, Tsukuba, Ibaraki 305–0044, Japan
    • International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki, Tsukuba, Ibaraki 305–0044, Japan.
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Abstract

Simple solvent-vapor annealing was used to fabricate single crystals of dioctylbenzothienobenzothiophene on a polymer dielectric surface. By involving self-organized phase separation, crystal length is enhanced and a good semiconductor/insulator interface is obtained. The field-effect transistors (FETs) exhibit an average p-type FET mobility of 3.0 cm2 V−1 s−1, with a highest value of 9.1 cm2 V−1 s−1. The FET mobility increases as temperature decreases, which suggests intrinsic bandlike transport.

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