Simple solvent-vapor annealing was used to fabricate single crystals of dioctylbenzothienobenzothiophene on a polymer dielectric surface. By involving self-organized phase separation, crystal length is enhanced and a good semiconductor/insulator interface is obtained. The field-effect transistors (FETs) exhibit an average p-type FET mobility of 3.0 cm2 V−1 s−1, with a highest value of 9.1 cm2 V−1 s−1. The FET mobility increases as temperature decreases, which suggests intrinsic bandlike transport.
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