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Spectroscopic Characterization of Charged Defects in Polycrystalline Pentacene by Time- and Wavelength-Resolved Electric Force Microscopy

Authors

  • Justin L. Luria,

    1. Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853-1301, USA
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  • Kathleen A. Schwarz,

    1. Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853-1301, USA
    2. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501, USA
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  • Michael J. Jaquith,

    1. Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853-1301, USA
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  • Richard G. Hennig,

    1. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501, USA
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  • John A. Marohn

    Corresponding author
    1. Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853-1301, USA
    • Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853-1301, USA.
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Abstract

Spatial maps of topography and trapped charge are acquired for polycrystalline pentacene thin-film transistors using electric and atomic force microscopy. In regions of trapped charge, the rate of trap clearing is studied as a function of the wavelength of incident radiation.

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