Advanced Materials

Fundamental Limits on the Mobility of Nanotube-Based Semiconducting Inks

Authors

  • Nima Rouhi,

    Corresponding author
    1. Integrated Nanosytems Research Facility, Department of Electrical Engineering and Computer Science, University of California-Irvine, Irvine, CA, USA
    • Integrated Nanosytems Research Facility, Department of Electrical Engineering and Computer Science, University of California-Irvine, Irvine, CA, USA.
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  • Dheeraj Jain,

    1. Integrated Nanosytems Research Facility, Department of Electrical Engineering and Computer Science, University of California-Irvine, Irvine, CA, USA
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  • Katayoun Zand,

    1. Integrated Nanosytems Research Facility, Department of Electrical Engineering and Computer Science, University of California-Irvine, Irvine, CA, USA
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  • Peter John Burke

    1. Integrated Nanosytems Research Facility, Department of Electrical Engineering and Computer Science, University of California-Irvine, Irvine, CA, USA
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Abstract

High mobility and high on/off ratio thin-film transistors are fabricated using solution-based deposition of purified semiconducting carbon nanotubes. A comprehensive spectrum of the density starting from less than 10 tubes μm−2 to the high end of around 100 tubes μm−2 is investigated. This study provides the first important roadmap for the tradeoffs between mobility and on/off ratio in nanotube-based semiconducting inks.

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