The Nature of polarization fatigue in BiFeO3 was revealed using monodomain epitaxial thin films with different orientations. We have found that the fatigue strongly depends on switching path. Fatigue-free behavior is demonstrated in ferroelastic switching (71° and 109°). In contrast, a significant polarization fatigue occurs in ferroelectric switching (180°) which involves multiple switching paths and formation of charged domain walls that effectively pin domain walls and hence reduce the total switched volume.
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