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Advanced Materials

Local Doping of Silicon Using Nanoimprint Lithography and Molecular Monolayers

Authors

  • W. Pim Voorthuijzen,

    1. Molecular Nanofabrication Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
    2. NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
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  • M. Deniz Yilmaz,

    1. Molecular Nanofabrication Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
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  • Wouter J. M. Naber,

    1. NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
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  • Jurriaan Huskens,

    Corresponding author
    1. Molecular Nanofabrication Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
    • Molecular Nanofabrication Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
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  • Wilfred G. van der Wiel

    Corresponding author
    1. NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
    • NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands.
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Abstract

Micrometer-scale monolayer patterns of a phosphorus-containing molecular precursor are fabricated on nearly intrinsic Si(100) using nanoimprint lithography. The patterned sample is protected by a SiO2capping layer applied by electron beam evaporation and subjected to rapid thermal annealing (RTA) to diffuse the phosphorus dopant atoms into the bulk silicon locally.

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