Room-Temperature Fabrication of Ultrathin Oxide Gate Dielectrics for Low-Voltage Operation of Organic Field-Effect Transistors

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Abstract

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A high-κ zirconium oxide gate dielectric is fabricated using a solution-based process at room temperature. UV irradiation decomposes and oxidizes a zirconium-based gel film, which densifies into an ultrathin (<10 nm) dielectric, providing high areal capacitance and low leakage current when passivated with a SAM. Polymeric transistors are fabricated on the gate dielectric entirely at room temperaure and operate with gate swings below 3 V, displaying high mobility (0.2 cm2 V−1 s−1)

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