Advanced Materials

Excitonic Properties and Near-Infrared Coherent Random Lasing in Vertically Aligned CdSe Nanowires

Authors

  • Rui Chen,

    1. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
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  • Muhammad Iqbal Bakti Utama,

    1. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
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  • Zeping Peng,

    1. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
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  • Bo Peng,

    1. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
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  • Qihua Xiong,

    Corresponding author
    1. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
    2. Division of Microelectronics, School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore 639798, Singapore
    • Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore.
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  • Handong Sun

    Corresponding author
    1. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
    • Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore.
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Abstract

High-quality, vertically aligned CdSe nanowires (figure, top left) are prepared by the vapor transport growth technique. Strong free-exciton absorption and emission are observed (top right) and, under optical excitation, near-infrared coherent random lasing is demonstrated for the first time from CdSe nanowires at room temperature (bottom). The results show that this material system holds promise for optoelectronic applications.

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