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Nanosphere Lithography for the Fabrication of Ultranarrow Graphene Nanoribbons and On-Chip Bandgap Tuning of Graphene

Authors

  • Lei Liu,

    1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Yingli Zhang,

    1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Wenlong Wang,

    Corresponding author
    1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
    • Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Changzhi Gu,

    1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Xuedong Bai,

    1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Enge Wang

    Corresponding author
    1. International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, P. R. China
    • International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, P. R. China.
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Abstract

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An innovative approach for the high-throughput, rapid, and low-cost fabrication of ultranarrow graphene nanoribbons (GNRs) using nanosphere lithography (NSL) nanopatterning in combination with low-power O2 plasma etching is presented. The intrinsic simplicity of NSL patterning enables this fabrication approach to be applicable for the straightforward on-chip fabrication of GNRs and bandgap tuning of graphene.

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