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High-Mobility Low-Voltage ZnO and Li-Doped ZnO Transistors Based on ZrO2 High-k Dielectric Grown by Spray Pyrolysis in Ambient Air

Authors

  • George Adamopoulos,

    Corresponding author
    1. Department of Physics and Centre for Plastic Electronics, Imperial College London, Blackett Laboratory, London, SW7 2BW, UK
    • Department of Physics and Centre for Plastic Electronics, Imperial College London, Blackett Laboratory, London, SW7 2BW, UK.
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  • Stuart Thomas,

    1. Department of Physics and Centre for Plastic Electronics, Imperial College London, Blackett Laboratory, London, SW7 2BW, UK
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  • Paul H. Wöbkenberg,

    1. Department of Physics and Centre for Plastic Electronics, Imperial College London, Blackett Laboratory, London, SW7 2BW, UK
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  • Donal D. C. Bradley,

    1. Department of Physics and Centre for Plastic Electronics, Imperial College London, Blackett Laboratory, London, SW7 2BW, UK
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  • Martyn A. McLachlan,

    1. Department of Materials and Centre for Plastic Electronics, Imperial College London, London SW7 2AZ, UK
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  • Thomas D. Anthopoulos

    Corresponding author
    1. Department of Physics and Centre for Plastic Electronics, Imperial College London, Blackett Laboratory, London, SW7 2BW, UK
    • Department of Physics and Centre for Plastic Electronics, Imperial College London, Blackett Laboratory, London, SW7 2BW, UK.
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Abstract

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Sequential layers of the high-k dielectric ZrO2 and the electron transporting semiconductors ZnO and Li-doped ZnO are deposited onto conductive indium tin oxide electrodes using spray pyrolysis. With these structures, thin-film transistors are fabricated with operating voltages below 6 V and maximum electron mobilities on the order of 85 cm2 V−1 s−1.

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