On-Nanowire Band-Graded Si:Ge Photodetectors

Authors

  • Cheol-Joo Kim,

    1. Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, Korea
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  • Hyun-Seung Lee,

    1. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, Korea
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  • Yong-Jun Cho,

    1. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, Korea
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  • Jee-Eun Yang,

    1. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, Korea
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  • Ru Ri Lee,

    1. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, Korea
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  • Ja Kyung Lee,

    1. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, Korea
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  • Moon-Ho Jo

    Corresponding author
    1. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, Korea
    2. Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, Korea
    • Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, Korea.
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Abstract

original image

An on-nanowire (on-NW) band-graded photodetector that pertains to the on-nanowire composition gradation from pure Si to pure Ge, Si1–xGex (0 ≤ x ≤ 1), is reported. The spectral onset of interband photocarrier generation and photocurrent amplitude are on-NW de-multiflexed over the continuously varying energy band gap and surface trap state density in an individually addressable manner.

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