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Communication

On-Nanowire Band-Graded Si:Ge Photodetectors

  1. Cheol-Joo Kim2,
  2. Hyun-Seung Lee1,
  3. Yong-Jun Cho1,
  4. Jee-Eun Yang1,
  5. Ru Ri Lee1,
  6. Ja Kyung Lee1,
  7. Moon-Ho Jo1,2,*

Article first published online: 14 JAN 2011

DOI: 10.1002/adma.201004034

Issue

Advanced Materials

Advanced Materials

Volume 23, Issue 8, pages 1025–1029, February 22, 2011

Additional Information

How to Cite

Kim, C.-J., Lee, H.-S., Cho, Y.-J., Yang, J.-E., Lee, R. R., Lee, J. K. and Jo, M.-H. (2011), On-Nanowire Band-Graded Si:Ge Photodetectors. Adv. Mater., 23: 1025–1029. doi: 10.1002/adma.201004034

Author Information

  1. 1

    Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, Korea

  2. 2

    Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, Korea

*Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, Korea.

Publication History

  1. Issue published online: 21 FEB 2011
  2. Article first published online: 14 JAN 2011
  3. Manuscript Received: 1 NOV 2010

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Keywords:

  • band-gap modulation;
  • nanowires;
  • photodetectors;
  • Si:Ge semiconductors
Thumbnail image of graphical abstract

An on-nanowire (on-NW) band-graded photodetector that pertains to the on-nanowire composition gradation from pure Si to pure Ge, Si1–xGex (0 ≤ x ≤ 1), is reported. The spectral onset of interband photocarrier generation and photocurrent amplitude are on-NW de-multiflexed over the continuously varying energy band gap and surface trap state density in an individually addressable manner.

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