Optoelectronic Gate Dielectrics for High Brightness and High-Efficiency Light-Emitting Transistors
Version of Record online: 26 APR 2011
Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Special Issue: Special Issue: Materials Research at the University of California, Santa Barbara
Volume 23, Issue 20, pages 2353–2356, May 24, 2011
How to Cite
Namdas, E. B., Hsu, B. B.Y., Yuen, J. D., Samuel, I. D. W. and Heeger, A. J. (2011), Optoelectronic Gate Dielectrics for High Brightness and High-Efficiency Light-Emitting Transistors. Adv. Mater., 23: 2353–2356. doi: 10.1002/adma.201004102
- Issue online: 24 MAY 2011
- Version of Record online: 26 APR 2011
- Manuscript Revised: 1 FEB 2011
- Manuscript Received: 6 NOV 2010
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