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Advanced Materials

Synthesis of Nitrogen-Doped Graphene Using Embedded Carbon and Nitrogen Sources

Authors

  • Chaohua Zhang,

    1. Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
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    • These authors contributed equally to this work.

  • Lei Fu,

    1. Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
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    • These authors contributed equally to this work.

  • Nan Liu,

    1. Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
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  • Minhao Liu,

    1. Department of Physics, Tsinghua University, Beijing, 100084, P. R. China
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  • Yayu Wang,

    1. Department of Physics, Tsinghua University, Beijing, 100084, P. R. China
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  • Zhongfan Liu

    Corresponding author
    1. Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
    • Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China.
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Abstract

A facile strategy to grow nitrogen-doped graphene using embedded nitrogen and carbon in metal substrate via a segregation method is reported. As doping is concurrently carried out in the segregation process of the carbon species, N atoms can be substitutionally doped into the graphene lattice. This approach allows precise control of the doping degree and location, which enables growing various heterojunctions at the desired location.

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