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Heavily Doped p-Type PbSe with High Thermoelectric Performance: An Alternative for PbTe

  1. Heng Wang,
  2. Yanzhong Pei,
  3. Aaron D. LaLonde,
  4. G. Jeffrey Snyder*

Article first published online: 10 FEB 2011

DOI: 10.1002/adma.201004200

Issue

Advanced Materials

Advanced Materials

Volume 23, Issue 11, pages 1366–1370, March 18, 2011

Additional Information

How to Cite

Wang, H., Pei, Y., LaLonde, A. D. and Snyder, G. J. (2011), Heavily Doped p-Type PbSe with High Thermoelectric Performance: An Alternative for PbTe. Adv. Mater., 23: 1366–1370. doi: 10.1002/adma.201004200

Author Information

  1. Department of Materials Science, California Institute of Technology, Pasadena, CA 91125, USA

*Department of Materials Science, California Institute of Technology, Pasadena, CA 91125, USA.

Publication History

  1. Issue published online: 14 MAR 2011
  2. Article first published online: 10 FEB 2011
  3. Manuscript Received: 14 NOV 2010

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Keywords:

  • thermoelectrics;
  • lead chalcogenides;
  • PbSe;
  • PbTe
Thumbnail image of graphical abstract

PbSe was expected to have a smaller bandgap and higher thermalconductivity than PbTe. Instead, these values are about the same at high temperature leading to comparable thermoelectric figure of merit, with zT> 1 achieved in heavily doped p-type PbSe.

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