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Advanced Materials

Top-Gate Organic Field-Effect Transistors with High Environmental and Operational Stability

Authors

  • Do Kyung Hwang,

    1. Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
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  • Canek Fuentes-Hernandez,

    1. Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
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  • Jungbae Kim,

    1. Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
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  • William J. Potscavage Jr.,

    1. Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
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  • Sung-Jin Kim,

    1. Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
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  • Bernard Kippelen

    Corresponding author
    1. Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
    • Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
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Abstract

Top-gate organic field-effect transistors are demonstrated using a bilayer gate dielectric to propose a new compensation mechanism which leads to high operational stability. Neither changes in mobility nor threshold voltage changes are observed after 20 000 cycles of the transfer characteristics or after 24 hours under constant direct-current bias stress. We also demonstrate that these OFETs are air stable up to 210 days.

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