Top-Gate Organic Field-Effect Transistors with High Environmental and Operational Stability
Version of Record online: 25 JAN 2011
Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 23, Issue 10, pages 1293–1298, March 11, 2011
How to Cite
Hwang, D. K., Fuentes-Hernandez, C., Kim, J., Potscavage, W. J., Kim, S.-J. and Kippelen, B. (2011), Top-Gate Organic Field-Effect Transistors with High Environmental and Operational Stability. Adv. Mater., 23: 1293–1298. doi: 10.1002/adma.201004278
- Issue online: 7 MAR 2011
- Version of Record online: 25 JAN 2011
- Manuscript Revised: 20 DEC 2010
- Manuscript Received: 20 NOV 2010
Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors.
Please note: Wiley Blackwell is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.