High-Performance Programmable Memory Devices Based on Co-Doped BaTiO3
Version of Record online: 15 FEB 2011
Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 23, Issue 11, pages 1351–1355, March 18, 2011
How to Cite
Yan, Z., Guo, Y., Zhang, G. and Liu, J.-M. (2011), High-Performance Programmable Memory Devices Based on Co-Doped BaTiO3. Adv. Mater., 23: 1351–1355. doi: 10.1002/adma.201004306
- Issue online: 14 MAR 2011
- Version of Record online: 15 FEB 2011
- Manuscript Received: 22 NOV 2011
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