Communication

Availability of Liquid Crystallinity in Solution Processing for Polycrystalline Thin Films

  1. Hiroaki Iino,
  2. Jun-ichi Hanna*

Article first published online: 25 FEB 2011

DOI: 10.1002/adma.201004474

Issue

Advanced Materials

Advanced Materials

Volume 23, Issue 15, pages 1748–1751, April 19, 2011

Additional Information

How to Cite

Iino, H. and Hanna, J.-i. (2011), Availability of Liquid Crystallinity in Solution Processing for Polycrystalline Thin Films. Adv. Mater., 23: 1748–1751. doi: 10.1002/adma.201004474

Author Information

  1. Imaging Science and Engineering Laboratory, Tokyo Institute of Technology and JST-CREST, 4259-J1-2, Nagatsuta, Midori-ku, Yokohama, 226-8503, Japan

*Imaging Science and Engineering Laboratory, Tokyo Institute of Technology and JST-CREST, 4259-J1-2, Nagatsuta, Midori-ku, Yokohama, 226-8503, Japan.

Publication History

  1. Issue published online: 13 APR 2011
  2. Article first published online: 25 FEB 2011
  3. Manuscript Revised: 18 JAN 2011
  4. Manuscript Received: 6 DEC 2010

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Keywords:

  • field-effect transistors;
  • liquid crystals;
  • polycrystalline materials;
  • solution processing
Thumbnail image of graphical abstract

Polycrystalline thin films fabricated from a liquid crystalline phase are quite uniform both on the millimeter and nanometer scale. The uniform polycrystalline thin films are established by two model liquid crystalline materials, dialkylated terthiophene and benzothienobenzothiophene derivatives, and show high FET mobility, 0.1 and 3.0 cm2 V−1 s−1, respectively. Such uniform films are not obtained by post thermal annealing.

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