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Keywords:

  • metal-insulator transition;
  • memristance;
  • electronic properties;
  • phase transformation
Thumbnail image of graphical abstract

We experimentally demonstrate and present an analytical model for a nanoscale metal/oxide/metal device that simultaneously exhibits memristance, based on oxygen vacancy drift, and current-controlled negative differential resistance, based on a metal-insulator transition instability. We show that this oxide nanodevice can be used to fabricate a continuously tunable voltage-controlled oscillator.