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Advanced Materials

p-i-n Homojunction in Organic Light-Emitting Transistors

Authors

  • Satria Zulkarnaen Bisri,

    Corresponding author
    1. Department of Physics, Graduate School of Science, Tohoku University, Sendai 980–8578, Japan
    • Department of Physics, Graduate School of Science, Tohoku University, Sendai 980–8578, Japan
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  • Taishi Takenobu,

    Corresponding author
    1. Department of Applied Physics, Waseda University, Tokyo, Japan, PRESTO, Japan Science, and Technology Agency, Saitama 332–0012, Japan
    • Department of Applied Physics, Waseda University, Tokyo, Japan, PRESTO, Japan Science, and Technology Agency, Saitama 332–0012, Japan.
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  • Kosuke Sawabe,

    1. Department of Physics, Graduate School of Science, Tohoku University, Sendai 980–8578, Japan
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  • Satoshi Tsuda,

    1. Department of Physics, Graduate School of Science, Tohoku University, Sendai 980–8578, Japan
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  • Yohei Yomogida,

    1. Department of Physics, Graduate School of Science, Tohoku University, Sendai 980–8578, Japan
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  • Takeshi Yamao,

    1. Department of Macromolecular Science and Engineering, Kyoto Institute of Technology Kyoto 606–8585, Japan
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  • Shu Hotta,

    1. Department of Macromolecular Science and Engineering, Kyoto Institute of Technology Kyoto 606–8585, Japan
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  • Chihaya Adachi,

    1. Center for Future Chemistry, Kyushu University, Fukuoka 819–0395, Japan
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  • Yoshihiro Iwasa

    1. Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo 113–8656, Japan, Correlated Electron Research Group (CERG), RIKEN-Advanced Science Institute, Saitama 351-0198, Japan, CREST, Japan Science and Technology Corporation, Saitama 332–0012, Japan
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Abstract

A new method for investigating light-emitting property in organic devices is demonstrated. We apply the ambipolar light-emitting transistors (LETs) to directly observe the recombination zone, and find a strong link between the transistor performance and the zone size. This finding unambiguously indicates that the light emission comes from the electric-field-induced p-i-n homojunction in ambipolar LETs.

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