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Keywords:

  • solution processing;
  • transistors;
  • ambient electronics;
  • organic electronics
Thumbnail image of graphical abstract

Exploration of high-performance solution-processed n-channel organic transistors with excellent stability is a critical issue for the development of powerful printed circuits. Solution-processed, bottom-gate transistors exhibiting a record electron mobility of up to 1.2 cm2 V−1 s−1 are reported. The devices show excellent stability, which enables the construction of all-solution-processed flexible circuits with all fabrication procedures performed in air.