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Advanced Materials

Functionalized Carbon Nanotube Networks with Field-Tunable Bandgaps

Authors

  • Yong Sik Ahn,

    1. Department of Mechanical and Aerospace Engineering, California NanoSystems Institute, University of California, Los Angeles, California 90095, USA
    Current affiliation:
    1. Y.S.A. and K.K. contributed equally to this work.
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  • Kyunghyun Kim,

    1. Department of Mechanical and Aerospace Engineering, California NanoSystems Institute, University of California, Los Angeles, California 90095, USA
    Current affiliation:
    1. Y.S.A. and K.K. contributed equally to this work.
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  • Hee Kun Park,

    1. Department of Mechanical and Aerospace Engineering, California NanoSystems Institute, University of California, Los Angeles, California 90095, USA
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  • H. Thomas Hahn,

    1. Department of Mechanical and Aerospace Engineering, California NanoSystems Institute, University of California, Los Angeles, California 90095, USA
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  • Yong Chen

    Corresponding author
    1. Department of Mechanical and Aerospace Engineering, California NanoSystems Institute, University of California, Los Angeles, California 90095, USA
    • Department of Mechanical and Aerospace Engineering, California NanoSystems Institute, University of California, Los Angeles, California 90095, USA.
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Abstract

An electrochemical cell with a hydrogen-containing PEG electrolyte is integrated in the gate of a CNT-based transistor to modify the CNT structures and bandgaps. CNTs in the transistor channel can be functionalized by electrochemical hydrogenation driven by gate voltages, which tunes CNT bandgaps continuously and reversibly to nonvolatile analog values between 0 and 3.2 eV. The CNT transistors with the flexibly tunable bandgaps are of both scientific and technical interest in analog memory, field programmable, neuromorphic, photonic, and photovoltaic devices and circuits.

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