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Tuning the Electron Gas at an Oxide Heterointerface via Free Surface Charges

Authors

  • Yanwu Xie,

    1. Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277–8561, Japan
    2. State Key Laboratory of Metastable Materials Science and Technology, Yanshan, University, Qinhuangdao, 066004, China
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  • Christopher Bell,

    1. Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277–8561, Japan
    2. State Key Laboratory of Metastable Materials Science and Technology, Yanshan, University, Qinhuangdao, 066004, China
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  • Yasuyuki Hikita,

    1. Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277–8561, Japan
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  • Harold Y. Hwang

    Corresponding author
    1. Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277–8561, Japan
    2. Japan Science and Technology Agency, Kawaguchi, Saitama 332–0012, Japan
    3. Department of Applied Physics, Stanford University, CA 94305–4090, USA
    4. Stanford Institute for Materials and Energy Science, SLAC National Accelerator, Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025, USA
    • Stanford Institute for Materials and Energy Science, SLAC National Accelerator, Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025, USA.
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Abstract

original image

Stable and polarity-switchable free charges are written on the surface of a LaAlO3/SrTiO3 heterostructure using conducting atomic force microscopy. These charges reversibly tune the conductance at the LaAlO3/SrTiO3 interface in a non-volatile way. The modulation in carrier density is large, ≈3 × 1013 cm−2, comparable to the maximum modulation achieved by the normal field effect.

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