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Enhancement of the Thermoelectric Figure-of-Merit in a Wide Temperature Range in In4Se3–xCl0.03 Bulk Crystals

Authors

  • Jong-Soo Rhyee,

    Corresponding author
    1. Department of Applied Physics, College of Applied Science, Kyung Hee University, 1 Seocheon-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-701 Republic of Korea
    • Department of Applied Physics, College of Applied Science, Kyung Hee University, 1 Seocheon-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-701 Republic of Korea
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  • Kyunghan Ahn,

    1. Advanced Materials Research Center, Samsung Advanced Institute of Technology, Nongseo-dong 14-1, Giheung-gu, Yongin-si, Gyeonggi-do 446-712, Republic of Korea
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  • Kyu Hyoung Lee,

    Corresponding author
    1. Advanced Materials Research Center, Samsung Advanced Institute of Technology, Nongseo-dong 14-1, Giheung-gu, Yongin-si, Gyeonggi-do 446-712, Republic of Korea
    • Advanced Materials Research Center, Samsung Advanced Institute of Technology, Nongseo-dong 14-1, Giheung-gu, Yongin-si, Gyeonggi-do 446-712, Republic of Korea.
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  • Hyo Seok Ji,

    1. Department of Chemistry, Pohang University of Science and Technology, San 31, Hyojadong, Namgu, Pohang, Gyungbuk 790-784, Republic of Korea
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  • Ji-Hoon Shim

    1. Department of Chemistry, Pohang University of Science and Technology, San 31, Hyojadong, Namgu, Pohang, Gyungbuk 790-784, Republic of Korea
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Abstract

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The state-of-the-art record of thermo­electric figure-of-merit (ZT) of 1.53 at 425 °C is achieved by chlorine doping in In4Se3–xCl0.03 bulk crystalline materials as used for n-type thermoelectric energy harvesting. The low-dimensional property imparted by chlorine doping significantly increases the electrical conductivity and reduces the thermal conductivity resulting in a high power factor over a wide temperature range.

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